? semiconductor components industries, llc, 2011 may, 2011 ? rev. 5 1 publication order number: bc307/d bc307b amplifier transistors pnp silicon features ? this is a pb ? free device* maximum ratings rating symbol value unit collector ? emitter voltage v ceo ? 45 vdc collector ? base voltage v cbo ? 50 vdc emitter ? base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 100 madc total device dissipation @ t a = 25 c derate above 25 c p d 350 2.8 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.0 8.0 w mw/ c operating and storage junction temperature range t j , t stg ? 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? ambient r ja 357 c/w thermal resistance, junction ? to ? case r jc 125 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information collector 1 2 base 3 emitter http://onsemi.com bc307brl1g to ? 92 (pb ? free) 2000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. 1 2 bent lead tape & reel ammo pack 3 to ? 92 case 29 style 17 marking diagram bc30 7b ayww a = assembly location y = year ww = work week = pb ? free package (note: microdot may be in either location)
bc307b http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = ? 2.0 madc, i b = 0) v (br)ceo ? 45 ? ? vdc emitter ? base breakdown voltage (i e = ? 100 adc, i c = 0) v (br)ebo ? 5.0 ? ? vdc collector ? emitter leakage current (v ces = ? 50 v, v be = 0) (v ces = ? 50 v, v be = 0) t a = 125 c i ces ? ? ? 0.2 ? 0.2 ? 15 ? 4.0 nadc a on characteristics dc current gain (i c = ? 10 adc, v ce = ? 5.0 vdc) (i c = ? 2.0 madc, v ce = ? 5.0 vdc) (i c = ? 100 madc, v ce = ? 5.0 vdc) h fe ? 200 ? 150 290 180 ? 460 ? ? collector ? emitter saturation voltage (i c = ? 10 madc, i b = ? 0.5 madc) (i c = ? 10 madc, i b = see note 1) (i c = ? 100 madc, i b = ? 5.0 madc) v ce(sat) ? ? ? ? 0.10 ? 0.30 ? 0.25 ? 0.3 ? 0.6 ? vdc base ? emitter saturation voltage (i c = ? 10 madc, i b = ? 0.5 madc) (i c = ? 100 madc, i b = ? 5.0 madc) v be(sat) ? ? ? 0.7 ? 1.0 ? ? vdc base ? emitter on voltage (i c = ? 2.0 madc, v ce = ? 5.0 vdc) v be(on) ? 0.55 ? 0.62 ? 0.7 vdc dynamic characteristics current ? gain ? bandwidth product (i c = ? 10 madc, v ce = ? 5.0 vdc, f = 100 mhz) f t ? 280 ? mhz common base capacitance (v cb = ? 10 vdc, i c = 0, f = 1.0 mhz) c cbo ? ? 6.0 pf noise figure (i c = ? 0.2 madc, v ce = ? 5.0 vdc, r s = 2.0 k , f = 1.0 khz) nf ? 2.0 10 db 1. i c = ? 10 madc on the constant base current characteristic, which yields the point i c = ? 11 madc, v ce = ? 1.0 v.
bc307b http://onsemi.com 3 typical characteristics 2.0 1.5 1.0 0.2 0.3 0.5 0.7 -200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 i c , collector current (madc) figure 1. normalized dc current gain h fe , normalized dc current gain v ce = -10 v t a = 25 c -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 -0.1 i c , collector current (madc) figure 2. ?saturation? and ?on? voltages v, voltage (volts) t a = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce(sat) @ i c /i b = 10 400 20 30 40 60 80 100 200 300 i c , collector current (madc) figure 3. current ? gain ? bandwidth product f t , current-gain ? bandwidth product (mhz) c, capacitance (pf) 10 1.0 2.0 3.0 5.0 7.0 -0.4 v r , reverse voltage (volts) figure 4. capacitances t a = 25 c c ib c ob r b , base spreading resistance (ohms) 150 140 130 120 110 100 i c , collector current (madc) figure 5. output admittance -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 v ce = -10 v t a = 25 c -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 1.0 i c , collector current (madc) figure 6. base spreading resistance v ce = -10 v f = 1.0 khz t a = 25 c -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 v ce = -10 v f = 1.0 khz t a = 25 c -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 0.01 0.03 0.05 0.1 0.3 0.5 h , output admittance (ohms) ob 150
bc307b http://onsemi.com 4 package dimensions to ? 92 (to ? 226) case 29 ? 11 issue am notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j b k g section x ? x c v d n xx seating plane dim min max millimeters a 4.45 5.20 b 4.32 5.33 c 3.18 4.19 d 0.40 0.54 g 2.40 2.80 j 0.39 0.50 k 12.70 --- n 2.04 2.66 p 1.50 4.00 r 2.93 --- v 3.43 --- 1 t style 17: pin 1. collector 2. base 3. emitter on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 bc307/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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